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Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.

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Bibliographic Details
Title: Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.
Authors: Lee, Hyunwoo1, Shin, Changhwan1, cshin@korea.ac.kr
Source: Semiconductor Science & Technology; 2026, Vol. 41 Issue 6, p1-11, 11p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194202961
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.
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  Data: <searchLink fieldCode="AU" term="%22Lee%2C+Hyunwoo%22">Lee, Hyunwoo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Shin%2C+Changhwan%22">Shin, Changhwan</searchLink><relatesTo>1</relatesTo>, <i>cshin@korea.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; 2026, Vol. 41 Issue 6, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194202961
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/1361-6641/ae6df5
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 1
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      – TitleFull: Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.
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            NameFull: Lee, Hyunwoo
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            NameFull: Shin, Changhwan
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            – D: 01
              M: 06
              Text: 2026
              Type: published
              Y: 2026
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            – TitleFull: Semiconductor Science & Technology
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