APA (7th ed.) Citation

Wang, X., Gasvoda, R. J., Hudson, E. A., Kumar, P., & Agarwal, S. (2026). Plasma pretreatment to increase benzaldehyde attachment to the SiNx surface before atomic layer etching. Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 44(3), 1. https://doi.org/10.1116/6.0005274

Chicago Style (17th ed.) Citation

Wang, Xue, Ryan J. Gasvoda, Eric A. Hudson, Prabhat Kumar, and Sumit Agarwal. "Plasma Pretreatment to Increase Benzaldehyde Attachment to the SiNx Surface Before Atomic Layer Etching." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films 44, no. 3 (2026): 1. https://doi.org/10.1116/6.0005274.

MLA (9th ed.) Citation

Wang, Xue, et al. "Plasma Pretreatment to Increase Benzaldehyde Attachment to the SiNx Surface Before Atomic Layer Etching." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, vol. 44, no. 3, 2026, p. 1, https://doi.org/10.1116/6.0005274.