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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations.

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Bibliographic Details
Title: STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations.
Authors: Baral, Dinesh1,2, dbaral@uark.edu, Joshi, Ram3, Eldose, Nirosh M.1, Stanchu, Hryhorii1, de Oliveira, Fernando Maia1, Zhang, Diandian1, Du, Wei1,2, Nakamura, Hiroyuki1,3, Mazur, Yuriy I.1, Yu, Shui-Qing1,2, Salamo, Gregory J.1,3
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2026, Vol. 44 Issue 3, p1-7, 7p
Database: Applied Science & Technology Source
Description
ISSN:07342101
DOI:10.1116/6.0005407