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STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations.

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Title: STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations.
Authors: Baral, Dinesh1,2, dbaral@uark.edu, Joshi, Ram3, Eldose, Nirosh M.1, Stanchu, Hryhorii1, de Oliveira, Fernando Maia1, Zhang, Diandian1, Du, Wei1,2, Nakamura, Hiroyuki1,3, Mazur, Yuriy I.1, Yu, Shui-Qing1,2, Salamo, Gregory J.1,3
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2026, Vol. 44 Issue 3, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194305138
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1116/6.0005407
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      – Code: eng
        Text: English
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      – TitleFull: STM and ARPES characterization of quality of GeSn grown on Ge(001) for atomic ordering investigations.
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            NameFull: Baral, Dinesh
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            NameFull: Joshi, Ram
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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              Value: 07342101
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              Value: 44
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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