Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications.

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Bibliographic Details
Title: Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications.
Authors: Rajalingam, A.1, Nair, Shyni P.2, Maheswari, S.3, Sindhuja, N. M. Mary4, Senthilkumar, B.5, Pandi, V. Samuthira6, samuthirapandiv@citchennai.net
Source: Journal of Materials Science; Jul2026, Vol. 61 Issue 28, p19969-20040, 72p
Database: Applied Science & Technology Source
Description
ISSN:00222461
DOI:10.1007/s10853-026-12963-x