APA (7th ed.) Citation

Rajalingam, A., Nair, S. P., Maheswari, S., Sindhuja, N. M. M., Senthilkumar, B., & Pandi, V. S. (2026). Enhancement-mode GaN HEMTs: Recent developments in device design and performance for high-power applications. Journal of Materials Science, 61(28), 19969. https://doi.org/10.1007/s10853-026-12963-x

Chicago Style (17th ed.) Citation

Rajalingam, A., Shyni P. Nair, S. Maheswari, N. M. Mary Sindhuja, B. Senthilkumar, and V. Samuthira Pandi. "Enhancement-mode GaN HEMTs: Recent Developments in Device Design and Performance for High-power Applications." Journal of Materials Science 61, no. 28 (2026): 19969. https://doi.org/10.1007/s10853-026-12963-x.

MLA (9th ed.) Citation

Rajalingam, A., et al. "Enhancement-mode GaN HEMTs: Recent Developments in Device Design and Performance for High-power Applications." Journal of Materials Science, vol. 61, no. 28, 2026, p. 19969, https://doi.org/10.1007/s10853-026-12963-x.