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Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications.

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Title: Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications.
Authors: Rajalingam, A.1, Nair, Shyni P.2, Maheswari, S.3, Sindhuja, N. M. Mary4, Senthilkumar, B.5, Pandi, V. Samuthira6, samuthirapandiv@citchennai.net
Source: Journal of Materials Science; Jul2026, Vol. 61 Issue 28, p19969-20040, 72p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194545757
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="AU" term="%22Rajalingam%2C+A%2E%22">Rajalingam, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Nair%2C+Shyni+P%2E%22">Nair, Shyni P.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Maheswari%2C+S%2E%22">Maheswari, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Sindhuja%2C+N%2E+M%2E+Mary%22">Sindhuja, N. M. Mary</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Senthilkumar%2C+B%2E%22">Senthilkumar, B.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Pandi%2C+V%2E+Samuthira%22">Pandi, V. Samuthira</searchLink><relatesTo>6</relatesTo>, <i>samuthirapandiv@citchennai.net</i>
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      – Type: doi
        Value: 10.1007/s10853-026-12963-x
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      – Code: eng
        Text: English
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        StartPage: 19969
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      – TitleFull: Enhancement-mode GaN HEMTs: recent developments in device design and performance for high-power applications.
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            NameFull: Rajalingam, A.
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            NameFull: Nair, Shyni P.
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            NameFull: Maheswari, S.
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            NameFull: Sindhuja, N. M. Mary
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            NameFull: Senthilkumar, B.
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              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
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