In situ nitrogen doping enables highly stable InSnZnON thin-film transistors.
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| Title: | In situ nitrogen doping enables highly stable InSnZnON thin-film transistors. |
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| Authors: | Liu, Tao1, Wang, Chunlan1, wangchunlan@whu.edu.cn, Zhou, Xin1, Jin, Zhiyang1, Wang, Jingli2, Zou, Xuming3, wangchunlan@whu.edu.cn |
| Source: | Applied Physics Letters; 6/22/2026, Vol. 128 Issue 25, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0314414 |
