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In situ nitrogen doping enables highly stable InSnZnON thin-film transistors.

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Title: In situ nitrogen doping enables highly stable InSnZnON thin-film transistors.
Authors: Liu, Tao1, Wang, Chunlan1, wangchunlan@whu.edu.cn, Zhou, Xin1, Jin, Zhiyang1, Wang, Jingli2, Zou, Xuming3, wangchunlan@whu.edu.cn
Source: Applied Physics Letters; 6/22/2026, Vol. 128 Issue 25, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194894926
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: In situ nitrogen doping enables highly stable InSnZnON thin-film transistors.
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  Data: <searchLink fieldCode="AU" term="%22Liu%2C+Tao%22">Liu, Tao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Chunlan%22">Wang, Chunlan</searchLink><relatesTo>1</relatesTo>, <i>wangchunlan@whu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Zhou%2C+Xin%22">Zhou, Xin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jin%2C+Zhiyang%22">Jin, Zhiyang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Jingli%22">Wang, Jingli</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zou%2C+Xuming%22">Zou, Xuming</searchLink><relatesTo>3</relatesTo>, <i>wangchunlan@whu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/22/2026, Vol. 128 Issue 25, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194894926
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      – Type: doi
        Value: 10.1063/5.0314414
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      – Code: eng
        Text: English
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      – TitleFull: In situ nitrogen doping enables highly stable InSnZnON thin-film transistors.
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            NameFull: Liu, Tao
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            NameFull: Wang, Chunlan
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            NameFull: Zhou, Xin
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            NameFull: Jin, Zhiyang
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            NameFull: Wang, Jingli
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            – D: 22
              M: 06
              Text: 6/22/2026
              Type: published
              Y: 2026
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