Temperature dependence of spin-dependent recombination in a SiC power device.

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Bibliographic Details
Title: Temperature dependence of spin-dependent recombination in a SiC power device.
Authors: Lew, C. T.-K.1, christopher.tao-kuan.lew@rmit.edu.au, McCallum, J. C.2, Johnson, B. C.1, brett.johnson2@rmit.edu.au
Source: Applied Physics Letters; 6/22/2026, Vol. 128 Issue 25, p1-5, 5p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0328703