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Temperature dependence of spin-dependent recombination in a SiC power device.

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Title: Temperature dependence of spin-dependent recombination in a SiC power device.
Authors: Lew, C. T.-K.1, christopher.tao-kuan.lew@rmit.edu.au, McCallum, J. C.2, Johnson, B. C.1, brett.johnson2@rmit.edu.au
Source: Applied Physics Letters; 6/22/2026, Vol. 128 Issue 25, p1-5, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194894981
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Temperature dependence of spin-dependent recombination in a SiC power device.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/22/2026, Vol. 128 Issue 25, p1-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194894981
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/5.0328703
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      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: Temperature dependence of spin-dependent recombination in a SiC power device.
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            NameFull: Lew, C. T.-K.
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            NameFull: McCallum, J. C.
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              Text: 6/22/2026
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              Y: 2026
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              Value: 128
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