Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.

Saved in:
Bibliographic Details
Title: Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.
Authors: Saleh, Mohammed A.1,2, Fakhri, Makram A.3, makram.a.fakhri@uotechnology.edu.iqmokaram_76@yahoo.com, Ahmad, Ahmad K.1, Curreli, Nicola, nicola.curreli@unica.it
Source: International Journal of Optics; 6/27/2026, Vol. 2026, p1-14, 14p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:16879384
DOI:10.1155/ijo/8079583