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Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.

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Title: Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.
Authors: Saleh, Mohammed A.1,2, Fakhri, Makram A.3, makram.a.fakhri@uotechnology.edu.iqmokaram_76@yahoo.com, Ahmad, Ahmad K.1, Curreli, Nicola, nicola.curreli@unica.it
Source: International Journal of Optics; 6/27/2026, Vol. 2026, p1-14, 14p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.
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        Value: 10.1155/ijo/8079583
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        Text: English
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      – TitleFull: Investigation of Structural, Morphological, and Topographical Properties of InGaN/Porous Silicon Heterostructure Prepared by the PLD Technique.
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              Text: 6/27/2026
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              Y: 2026
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              Value: 2026
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