Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.

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Bibliographic Details
Title: Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.
Authors: Sahoo, Jayaprakash1, Sharma, Shivam2, Vagadia, Megha3, Hübner, René4, Sahastrabuddhe, Ganesh1, Mishra, Ashish Kumar1, Singh, Ravi Shankar1, De Sarkar, Abir2, Rana, D. S.1, dsrana@iiserb.ac.in
Source: Advanced Functional Materials; 7/2/2026, Vol. 36 Issue 53, p1-11, 11p
Database: Applied Science & Technology Source
Description
ISSN:1616301X
DOI:10.1002/adfm.76416