APA (7th ed.) Citation

Sahoo, J., Sharma, S., Vagadia, M., Hübner, R., Sahastrabuddhe, G., Mishra, A. K., . . . Rana, D. S. (2026). Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering. Advanced Functional Materials, 36(53), 1. https://doi.org/10.1002/adfm.76416

Chicago Style (17th ed.) Citation

Sahoo, Jayaprakash, Shivam Sharma, Megha Vagadia, René Hübner, Ganesh Sahastrabuddhe, Ashish Kumar Mishra, Ravi Shankar Singh, Abir De Sarkar, and D. S. Rana. "Sign Switching of Spin Hall Magnetoresistance in All Oxide Heterostructures via Atomistic Interface Engineering." Advanced Functional Materials 36, no. 53 (2026): 1. https://doi.org/10.1002/adfm.76416.

MLA (9th ed.) Citation

Sahoo, Jayaprakash, et al. "Sign Switching of Spin Hall Magnetoresistance in All Oxide Heterostructures via Atomistic Interface Engineering." Advanced Functional Materials, vol. 36, no. 53, 2026, p. 1, https://doi.org/10.1002/adfm.76416.