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Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.

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Title: Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.
Authors: Sahoo, Jayaprakash1, Sharma, Shivam2, Vagadia, Megha3, Hübner, René4, Sahastrabuddhe, Ganesh1, Mishra, Ashish Kumar1, Singh, Ravi Shankar1, De Sarkar, Abir2, Rana, D. S.1, dsrana@iiserb.ac.in
Source: Advanced Functional Materials; 7/2/2026, Vol. 36 Issue 53, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 195097253
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 7/2/2026, Vol. 36 Issue 53, p1-11, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=195097253
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        Value: 10.1002/adfm.76416
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        Text: English
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        PageCount: 11
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      – TitleFull: Sign Switching of Spin Hall Magnetoresistance in all Oxide Heterostructures via Atomistic Interface Engineering.
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              Text: 7/2/2026
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              Y: 2026
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