Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.
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| Title: | Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature. |
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| Authors: | Atalla, Yousif1, 2022131887@isiswa.uitm.edu.my, Mamat, Mohamad Hafiz1, mhmamat@uitm.edu.my, Hashim, Yasir2, yasir.hashim@ieee.org |
| Source: | Pertanika Journal of Science & Technology; Jun2026, Vol. 34 Issue 3, p1433-1449, 17p |
| Database: | Applied Science & Technology Source |
| ISSN: | 01287680 |
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| DOI: | 10.47836/pjst.34.3.07 |
