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Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.

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Title: Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.
Authors: Atalla, Yousif1, 2022131887@isiswa.uitm.edu.my, Mamat, Mohamad Hafiz1, mhmamat@uitm.edu.my, Hashim, Yasir2, yasir.hashim@ieee.org
Source: Pertanika Journal of Science & Technology; Jun2026, Vol. 34 Issue 3, p1433-1449, 17p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 195172676
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PubType: Academic Journal
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  Data: Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.
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  Data: <searchLink fieldCode="AU" term="%22Atalla%2C+Yousif%22">Atalla, Yousif</searchLink><relatesTo>1</relatesTo>, <i>2022131887@isiswa.uitm.edu.my</i><br /><searchLink fieldCode="AU" term="%22Mamat%2C+Mohamad+Hafiz%22">Mamat, Mohamad Hafiz</searchLink><relatesTo>1</relatesTo>, <i>mhmamat@uitm.edu.my</i><br /><searchLink fieldCode="AU" term="%22Hashim%2C+Yasir%22">Hashim, Yasir</searchLink><relatesTo>2</relatesTo>, <i>yasir.hashim@ieee.org</i>
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  Data: <searchLink fieldCode="JN" term="%22Pertanika+Journal+of+Science+%26+Technology%22">Pertanika Journal of Science & Technology</searchLink>; Jun2026, Vol. 34 Issue 3, p1433-1449, 17p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.47836/pjst.34.3.07
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 1433
    Titles:
      – TitleFull: Silicon-based Fin Field-Effect Transistor (Si-FinFET) Optimisation Based on Gate Length and Operating Temperature.
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            NameFull: Atalla, Yousif
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            NameFull: Mamat, Mohamad Hafiz
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            – D: 01
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              Text: Jun2026
              Type: published
              Y: 2026
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              Value: 34
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