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Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics.

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Bibliographic Details
Title: Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics.
Authors: Yang, Ki Dong1, kid.yang@samsung.com, Lee, Changjun1, Lee, Kyungdong2, Suh, Bong Lim3, Lee, Keonyeong1, Yoo, Suyoung3, Jung, Sangmin2, Choi, Hoomi1, Han, Eunyoung1, Kim, Young Jeong1
Source: Microelectronics Reliability; Aug2026, Vol. 183, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:00262714
DOI:10.1016/j.microrel.2026.116208