Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics.
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| Title: | Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics. |
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| Authors: | Yang, Ki Dong1, kid.yang@samsung.com, Lee, Changjun1, Lee, Kyungdong2, Suh, Bong Lim3, Lee, Keonyeong1, Yoo, Suyoung3, Jung, Sangmin2, Choi, Hoomi1, Han, Eunyoung1, Kim, Young Jeong1 |
| Source: | Microelectronics Reliability; Aug2026, Vol. 183, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 195184046 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Yang%2C+Ki+Dong%22">Yang, Ki Dong</searchLink><relatesTo>1</relatesTo>, <i>kid.yang@samsung.com</i><br /><searchLink fieldCode="AU" term="%22Lee%2C+Changjun%22">Lee, Changjun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Kyungdong%22">Lee, Kyungdong</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Suh%2C+Bong+Lim%22">Suh, Bong Lim</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Keonyeong%22">Lee, Keonyeong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yoo%2C+Suyoung%22">Yoo, Suyoung</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Jung%2C+Sangmin%22">Jung, Sangmin</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Hoomi%22">Choi, Hoomi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Han%2C+Eunyoung%22">Han, Eunyoung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Young+Jeong%22">Kim, Young Jeong</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>; Aug2026, Vol. 183, pN.PAG-N.PAG, 1p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=195184046 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.microrel.2026.116208 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Titles: – TitleFull: Investigation and control of dopant diffusion behavior following high-current p-implantation and its influence on defect formation and electrical characteristics. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yang, Ki Dong – PersonEntity: Name: NameFull: Lee, Changjun – PersonEntity: Name: NameFull: Lee, Kyungdong – PersonEntity: Name: NameFull: Suh, Bong Lim – PersonEntity: Name: NameFull: Lee, Keonyeong – PersonEntity: Name: NameFull: Yoo, Suyoung – PersonEntity: Name: NameFull: Jung, Sangmin – PersonEntity: Name: NameFull: Choi, Hoomi – PersonEntity: Name: NameFull: Han, Eunyoung – PersonEntity: Name: NameFull: Kim, Young Jeong IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 00262714 Numbering: – Type: volume Value: 183 Titles: – TitleFull: Microelectronics Reliability Type: main |
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