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In‐Situ Thermal Conductivity Modulation and Characterization of Silicon Carbide Nanowires via Bending Strain.

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Title: In‐Situ Thermal Conductivity Modulation and Characterization of Silicon Carbide Nanowires via Bending Strain.
Authors: Gu, Guangjie1, Fu, Yifan1, Li, Zhen2, Yan, Simin1, Jin, Zhanrui1, He, Shiqi1, Gao, Zijian1, Sun, Litao1, Nie, Meng1, m_nie@seu.edu.cn, Yin, Kuibo1, yinkuibo@seu.edu.cn
Source: Advanced Materials Technologies; Jul2026, Vol. 11 Issue 13, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 195290098
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: In‐Situ Thermal Conductivity Modulation and Characterization of Silicon Carbide Nanowires via Bending Strain.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Materials+Technologies%22">Advanced Materials Technologies</searchLink>; Jul2026, Vol. 11 Issue 13, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=195290098
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        Value: 10.1002/admt.202501529
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        Text: English
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      – TitleFull: In‐Situ Thermal Conductivity Modulation and Characterization of Silicon Carbide Nanowires via Bending Strain.
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              Text: Jul2026
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              Y: 2026
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