Influence of growth-sector structure on electrical characteristics of Schottky and ohmic contacts to boron-doped HPHT diamond.

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Bibliographic Details
Title: Influence of growth-sector structure on electrical characteristics of Schottky and ohmic contacts to boron-doped HPHT diamond.
Authors: Kudryk, Ya. Ya.1, Strelchuk, V. V.1, Maziar, D. M.1, Belyaev, A. E.1, Kovalenko, T. V.2, Marchenko, A. V.2, Lysakovskyi, V. V.2, Ivakhnenko, S. O.2, Dub, M. M.3,4, Sai, P. O.3,4, Knap, W.3,4, Nikolenko, A. S.1, nikolenko@isp.kiev.ua
Source: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2026, Vol. 29 Issue 2, p162-171, 10p
Database: Applied Science & Technology Source
Description
ISSN:15608034
DOI:10.15407/spqeo29.02.162