Bibliographic Details
| Title: |
Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate. |
| Authors: |
Mahapatra, R.1, rajat.mahapatra@ncl.ac.uk, Chakraborty, Amit K.2, Poolamai, N.1, Horsfall, A.1, Chattopadhyay, S.1, Wright, N. G.1, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3 |
| Source: |
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2007, Vol. 25 Issue 1, p217-223, 7p, 1 Black and White Photograph, 1 Diagram, 8 Graphs |
| Database: |
Applied Science & Technology Source |
