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Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.

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Title: Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.
Authors: Mahapatra, R.1, rajat.mahapatra@ncl.ac.uk, Chakraborty, Amit K.2, Poolamai, N.1, Horsfall, A.1, Chattopadhyay, S.1, Wright, N. G.1, Coleman, Karl S.2, Coleman, P. G.3, Burrows, C. P.3
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jan/Feb2007, Vol. 25 Issue 1, p217-223, 7p, 1 Black and White Photograph, 1 Diagram, 8 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 24368956
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Mahapatra%2C+R%2E%22">Mahapatra, R.</searchLink><relatesTo>1</relatesTo>, <i>rajat.mahapatra@ncl.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Chakraborty%2C+Amit+K%2E%22">Chakraborty, Amit K.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Poolamai%2C+N%2E%22">Poolamai, N.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Horsfall%2C+A%2E%22">Horsfall, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chattopadhyay%2C+S%2E%22">Chattopadhyay, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wright%2C+N%2E+G%2E%22">Wright, N. G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Coleman%2C+Karl+S%2E%22">Coleman, Karl S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Coleman%2C+P%2E+G%2E%22">Coleman, P. G.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Burrows%2C+C%2E+P%2E%22">Burrows, C. P.</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>; Jan/Feb2007, Vol. 25 Issue 1, p217-223, 7p, 1 Black and White Photograph, 1 Diagram, 8 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=24368956
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/1.2433976
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 217
    Titles:
      – TitleFull: Leakage current and charge trapping behavior in TiO2/SiO2 high-κ gate dielectric stack on 4H-SiC substrate.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Mahapatra, R.
      – PersonEntity:
          Name:
            NameFull: Chakraborty, Amit K.
      – PersonEntity:
          Name:
            NameFull: Poolamai, N.
      – PersonEntity:
          Name:
            NameFull: Horsfall, A.
      – PersonEntity:
          Name:
            NameFull: Chattopadhyay, S.
      – PersonEntity:
          Name:
            NameFull: Wright, N. G.
      – PersonEntity:
          Name:
            NameFull: Coleman, Karl S.
      – PersonEntity:
          Name:
            NameFull: Coleman, P. G.
      – PersonEntity:
          Name:
            NameFull: Burrows, C. P.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan/Feb2007
              Type: published
              Y: 2007
          Identifiers:
            – Type: issn-print
              Value: 10711023
          Numbering:
            – Type: volume
              Value: 25
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
              Type: main
ResultId 1