Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies.
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| Title: | Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies. |
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| Authors: | Bozanic, A.1, Majlinger, Z.1, Petravic, M.1, mpetravic@ffri.hr, Gao, Q.2, Llewellyn, D.2, Crotti, C.3, Yang, Y.-W.4 |
| Source: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2008, Vol. 26 Issue 4, p592-596, 5p, 1 Chart, 6 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 07342101 |
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| DOI: | 10.1116/1.2929851 |
