Circuit and Microarchitecture Evaluation of 3D Stacking Magnetic RAM (MRAM) as a Universal Memory Replacement.

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Bibliographic Details
Title: Circuit and Microarchitecture Evaluation of 3D Stacking Magnetic RAM (MRAM) as a Universal Memory Replacement.
Authors: Xiangyu Dong1, xydong@cse.psu.edu, Xiaoxia Wu1, xwu@cse.psu.edu, Guangyu Sun1, gsun@cse.psu.edu, Yuan Xie1, yuanxie@cse.psu.edu, Li, Helen2, helen.li@seagate.com, Chen, Yiran2, yiran.chen@seagate.com
Source: DAC: Annual ACM/IEEE Design Automation Conference; 2008, p554-559, 6p, 2 Diagrams, 8 Charts, 5 Graphs
Database: Applied Science & Technology Source
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