The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.

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Bibliographic Details
Title: The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.
Authors: Puga, M. M. S., Hummel, R. E., Burk, D. E.
Source: Semiconductor Science & Technology; August 1992, Vol. 7, p1067-1071, 5p
Database: Applied Science & Technology Source
Description
ISSN:02681242
DOI:10.1088/0268-1242/7/8/007