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The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.

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Bibliographic Details
Title: The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.
Authors: Puga, M. M. S., Hummel, R. E., Burk, D. E.
Source: Semiconductor Science & Technology; August 1992, Vol. 7, p1067-1071, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500017323
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; August 1992, Vol. 7, p1067-1071, 5p
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1088/0268-1242/7/8/007
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 1067
    Titles:
      – TitleFull: The effect of Fe, Cr and Mo on the resistivity of the top silicon layer of buried oxide silicon-on-insulator structures.
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            NameFull: Puga, M. M. S.
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            NameFull: Hummel, R. E.
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            NameFull: Burk, D. E.
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            – D: 01
              M: 08
              Text: August 1992
              Type: published
              Y: 1992
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              Value: 02681242
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              Value: 7
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            – TitleFull: Semiconductor Science & Technology
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