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A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition.

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Bibliographic Details
Title: A study of minority carrier lifetime versus doping concentration in n-type GaAs grown by metalorganic chemical vapor deposition.
Authors: Lush, G. B., MacMillan, H. F., Keyes, B. M.
Source: Journal of Applied Physics; August 15 1992, Vol. 72, p1436-1442, 7p
Database: Applied Science & Technology Source
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