Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4.
Saved in:
| Title: | Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4. |
|---|---|
| Authors: | Cheung, R., Thoms, S., Watt, M. |
| Source: | Semiconductor Science & Technology; September 1992, Vol. 7, p1189-1198, 10p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
|---|---|
| DOI: | 10.1088/0268-1242/7/9/008 |
