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Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4.

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Bibliographic Details
Title: Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4.
Authors: Cheung, R., Thoms, S., Watt, M.
Source: Semiconductor Science & Technology; September 1992, Vol. 7, p1189-1198, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500027919
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; September 1992, Vol. 7, p1189-1198, 10p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/0268-1242/7/9/008
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 1189
    Titles:
      – TitleFull: Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4.
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            NameFull: Cheung, R.
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            NameFull: Thoms, S.
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            NameFull: Watt, M.
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            – D: 01
              M: 09
              Text: September 1992
              Type: published
              Y: 1992
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              Value: 7
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            – TitleFull: Semiconductor Science & Technology
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