Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.

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Bibliographic Details
Title: Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.
Authors: Lubberts, G., Burkey, B. C.
Source: Journal of Applied Physics; February 1 1984, Vol. 55, p760-763, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.333109