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Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.

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Bibliographic Details
Title: Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.
Authors: Lubberts, G., Burkey, B. C.
Source: Journal of Applied Physics; February 1 1984, Vol. 55, p760-763, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500055056
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.
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  Data: <searchLink fieldCode="AU" term="%22Lubberts%2C+G%2E%22">Lubberts, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkey%2C+B%2E+C%2E%22">Burkey, B. C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; February 1 1984, Vol. 55, p760-763, 4p
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      – Type: doi
        Value: 10.1063/1.333109
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 760
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      – TitleFull: Optical and electrical properties of heavily phosphorus-doped epitaxial silicon layers.
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            NameFull: Lubberts, G.
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            NameFull: Burkey, B. C.
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              Text: February 1 1984
              Type: published
              Y: 1984
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              Value: 00218979
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              Value: 55
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            – TitleFull: Journal of Applied Physics
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