Dopant diffusion in silicon: a consistent view involving nonequilibrium defects.
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| Title: | Dopant diffusion in silicon: a consistent view involving nonequilibrium defects. |
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| Authors: | Mathiot, D., Pfister, J. C. |
| Source: | Journal of Applied Physics; May 15 1984, Vol. 55, p3518-3530, 13p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.332941 |
