APA (7th ed.) Citation

Mathiot, D., & Pfister, J. C. (1984). Dopant diffusion in silicon: A consistent view involving nonequilibrium defects. Journal of Applied Physics, 55, 3518. https://doi.org/10.1063/1.332941

Chicago Style (17th ed.) Citation

Mathiot, D., and J. C. Pfister. "Dopant Diffusion in Silicon: A Consistent View Involving Nonequilibrium Defects." Journal of Applied Physics 55 (1984): 3518. https://doi.org/10.1063/1.332941.

MLA (9th ed.) Citation

Mathiot, D., and J. C. Pfister. "Dopant Diffusion in Silicon: A Consistent View Involving Nonequilibrium Defects." Journal of Applied Physics, vol. 55, 1984, p. 3518, https://doi.org/10.1063/1.332941.