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Dopant diffusion in silicon: a consistent view involving nonequilibrium defects.

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Title: Dopant diffusion in silicon: a consistent view involving nonequilibrium defects.
Authors: Mathiot, D., Pfister, J. C.
Source: Journal of Applied Physics; May 15 1984, Vol. 55, p3518-3530, 13p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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        Value: 10.1063/1.332941
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 3518
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      – TitleFull: Dopant diffusion in silicon: a consistent view involving nonequilibrium defects.
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              Text: May 15 1984
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              Y: 1984
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