Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.
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| Title: | Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system. |
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| Authors: | Yew, Tri-Rung, Lin, Yung-Jen, Shieh, Ming-Deng |
| Source: | Journal of Applied Physics; 5/15/1993, Vol. 73, p4932-4936, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.353811 |
