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Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.

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Bibliographic Details
Title: Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.
Authors: Yew, Tri-Rung, Lin, Yung-Jen, Shieh, Ming-Deng
Source: Journal of Applied Physics; 5/15/1993, Vol. 73, p4932-4936, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500123182
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.
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  Data: <searchLink fieldCode="AU" term="%22Yew%2C+Tri-Rung%22">Yew, Tri-Rung</searchLink><br /><searchLink fieldCode="AU" term="%22Lin%2C+Yung-Jen%22">Lin, Yung-Jen</searchLink><br /><searchLink fieldCode="AU" term="%22Shieh%2C+Ming-Deng%22">Shieh, Ming-Deng</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 5/15/1993, Vol. 73, p4932-4936, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500123182
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.353811
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 4932
    Titles:
      – TitleFull: Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system.
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            NameFull: Yew, Tri-Rung
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            NameFull: Lin, Yung-Jen
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            NameFull: Shieh, Ming-Deng
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            – D: 15
              M: 05
              Text: 5/15/1993
              Type: published
              Y: 1993
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              Value: 73
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            – TitleFull: Journal of Applied Physics
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