Boron diffusion through thin gate oxides: influence of nitridation and effect on the Si/SiO2 interface electrical characteristics.
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| Title: | Boron diffusion through thin gate oxides: influence of nitridation and effect on the Si/SiO2 interface electrical characteristics. |
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| Authors: | Mathiot, D., Straboni, A., Andre, E. |
| Source: | Journal of Applied Physics; June 15 1993, Vol. 73, p8215-8220, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.353438 |
