APA (7th ed.) Citation

Mathiot, D., Straboni, A., & Andre, E. (1993). Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristics. Journal of Applied Physics, 73, 8215. https://doi.org/10.1063/1.353438

Chicago Style (17th ed.) Citation

Mathiot, D., A. Straboni, and E. Andre. "Boron Diffusion Through Thin Gate Oxides: Influence of Nitridation and Effect on the Si/SiO2 Interface Electrical Characteristics." Journal of Applied Physics 73 (1993): 8215. https://doi.org/10.1063/1.353438.

MLA (9th ed.) Citation

Mathiot, D., et al. "Boron Diffusion Through Thin Gate Oxides: Influence of Nitridation and Effect on the Si/SiO2 Interface Electrical Characteristics." Journal of Applied Physics, vol. 73, 1993, p. 8215, https://doi.org/10.1063/1.353438.