Spectrometry of very long-current transients in almost ideal silicon p-n junctions.

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Bibliographic Details
Title: Spectrometry of very long-current transients in almost ideal silicon p-n junctions.
Authors: Basso, G., Pellegrini, B., Polignano, M. L.
Source: Journal of Applied Physics; July 1 1993, Vol. 74, p387-396, 10p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.354122