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Spectrometry of very long-current transients in almost ideal silicon p-n junctions.

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Title: Spectrometry of very long-current transients in almost ideal silicon p-n junctions.
Authors: Basso, G., Pellegrini, B., Polignano, M. L.
Source: Journal of Applied Physics; July 1 1993, Vol. 74, p387-396, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500140285
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Spectrometry of very long-current transients in almost ideal silicon p-n junctions.
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  Data: <searchLink fieldCode="AU" term="%22Basso%2C+G%2E%22">Basso, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Pellegrini%2C+B%2E%22">Pellegrini, B.</searchLink><br /><searchLink fieldCode="AU" term="%22Polignano%2C+M%2E+L%2E%22">Polignano, M. L.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; July 1 1993, Vol. 74, p387-396, 10p
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        Value: 10.1063/1.354122
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 387
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      – TitleFull: Spectrometry of very long-current transients in almost ideal silicon p-n junctions.
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            NameFull: Basso, G.
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            NameFull: Pellegrini, B.
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            NameFull: Polignano, M. L.
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              Text: July 1 1993
              Type: published
              Y: 1993
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              Value: 74
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