Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction.
Saved in:
| Title: | Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction. |
|---|---|
| Authors: | Wang, C. A., Groves, S. H., Reinold, J. H. |
| Source: | Journal of Electronic Materials; November 1993, Vol. 22, p1365-1368, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 03615235 |
|---|---|
| DOI: | 10.1007/BF02817701 |
