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Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction.

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Bibliographic Details
Title: Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction.
Authors: Wang, C. A., Groves, S. H., Reinold, J. H.
Source: Journal of Electronic Materials; November 1993, Vol. 22, p1365-1368, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500184548
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction.
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  Data: <searchLink fieldCode="AU" term="%22Wang%2C+C%2E+A%2E%22">Wang, C. A.</searchLink><br /><searchLink fieldCode="AU" term="%22Groves%2C+S%2E+H%2E%22">Groves, S. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Reinold%2C+J%2E+H%2E%22">Reinold, J. H.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; November 1993, Vol. 22, p1365-1368, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500184548
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      – Type: doi
        Value: 10.1007/BF02817701
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 1365
    Titles:
      – TitleFull: Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction.
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            NameFull: Wang, C. A.
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            NameFull: Groves, S. H.
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            NameFull: Reinold, J. H.
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            – D: 01
              M: 11
              Text: November 1993
              Type: published
              Y: 1993
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              Value: 22
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            – TitleFull: Journal of Electronic Materials
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