The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.
Saved in:
| Title: | The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition. |
|---|---|
| Authors: | Shieh, Ming-Deng, Lee, Chiapyng, Yew, Tri-Rung |
| Source: | Journal of the Electrochemical Society; December 1994, Vol. 141, p3584-3587, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00134651 |
|---|---|
| DOI: | 10.1149/1.2059374 |
