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The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.

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Title: The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.
Authors: Shieh, Ming-Deng, Lee, Chiapyng, Yew, Tri-Rung
Source: Journal of the Electrochemical Society; December 1994, Vol. 141, p3584-3587, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500216055
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.
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  Data: <searchLink fieldCode="AU" term="%22Shieh%2C+Ming-Deng%22">Shieh, Ming-Deng</searchLink><br /><searchLink fieldCode="AU" term="%22Lee%2C+Chiapyng%22">Lee, Chiapyng</searchLink><br /><searchLink fieldCode="AU" term="%22Yew%2C+Tri-Rung%22">Yew, Tri-Rung</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; December 1994, Vol. 141, p3584-3587, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500216055
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1149/1.2059374
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 3584
    Titles:
      – TitleFull: The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.
        Type: main
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            NameFull: Shieh, Ming-Deng
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            NameFull: Lee, Chiapyng
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            NameFull: Yew, Tri-Rung
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            – D: 01
              M: 12
              Text: December 1994
              Type: published
              Y: 1994
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              Value: 00134651
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              Value: 141
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            – TitleFull: Journal of the Electrochemical Society
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