View in EDS

The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.

Saved in:
Bibliographic Details
Title: The kinetics of very low temperature (∼300°C) silicon epitaxial growth by confined plasma enhanced chemical vapor deposition.
Authors: Shieh, Ming-Deng, Lee, Chiapyng, Yew, Tri-Rung
Source: Journal of the Electrochemical Society; December 1994, Vol. 141, p3584-3587, 4p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first