Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.

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Bibliographic Details
Title: Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.
Authors: Sutherland, D. G. J., Akatsu, H., Copel, M.
Source: Journal of Applied Physics; December 1 1995, Vol. 78, p6761-6769, 9p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.360500