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Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.

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Title: Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.
Authors: Sutherland, D. G. J., Akatsu, H., Copel, M.
Source: Journal of Applied Physics; December 1 1995, Vol. 78, p6761-6769, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500246136
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.
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  Data: <searchLink fieldCode="AU" term="%22Sutherland%2C+D%2E+G%2E+J%2E%22">Sutherland, D. G. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Akatsu%2C+H%2E%22">Akatsu, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Copel%2C+M%2E%22">Copel, M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; December 1 1995, Vol. 78, p6761-6769, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500246136
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        Value: 10.1063/1.360500
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 6761
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      – TitleFull: Stoichiometry reversal in the growth of thin oxynitride films on Si(100) surfaces.
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            NameFull: Sutherland, D. G. J.
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            NameFull: Akatsu, H.
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            NameFull: Copel, M.
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            – D: 01
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              Text: December 1 1995
              Type: published
              Y: 1995
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              Value: 78
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