O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.

Saved in:
Bibliographic Details
Title: O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures.
Authors: Devine, R. A. B., Mathiot, D., Warren, W. L.
Source: Journal of Applied Physics; March 1 1996, Vol. 79, p2302-2308, 7p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.361155